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| absolute maximum ratings parameter units i d @ v gs = 12v, t c = 25c continuous drain current 9.6 i d @ v gs = 12v, t c = 100c continuous drain current 6.0 i dm pulsed drain current 38.4 p d @ t c = 25c max. power dissipation 75 w linear derating factor 0.6 w/c v gs gate-to-source voltage 20 v e as single pulse avalanche energy 59 mj i ar avalanche current 9.6 a e ar repetitive avalanche energy 7.5 mj dv/dt peak d iode recovery dv/dt 2.4 v/ns t j operating junction -55 to 150 t stg storage temperature range lead temperature 300 (0.063in./1.6mm from case for 10s) weight 4.3 (typical) g pre-irradiation international rectifier?s r5 tm technology provides high performance power mosfets for space applications. these devices have been characterized for single event effects (see) with useful performance up to an let of 80 (mev/(mg/cm 2 )). the combination of low r ds(on) and low gate charge reduces the power losses in switching applications such as dc to dc converters and motor control. these devices retain all of the well established advantages of mosfets such as voltage control, fast switching, ease of paralleling and temperature stability of electrical parameters. c a www.irf.com 1 to-257aa features: single event effect (see) hardened ultra low r ds(on) low total gate charge simple drive requirements ease of paralleling hermetically sealed ceramic eyelets light weight radiation hardened irhy57234cmse power mosfet 250v, n-channel thru-hole (to-257aa) technology product summary part number radiation level r ds(on) i d irhy57234cmse 100k rads (si) 0.41 ? 9.6a pd-93823c irhy57234cmse pre-irradiation 2 www.irf.com electrical characteristics @ tj = 25c (unless otherwise specified) parameter min typ max units t est conditions bv dss drain-to-source breakdown voltage 250 ? ? v v gs = 0v, i d = 1.0ma ? bv dss / ? t j temperature coefficient of breakdown ? 0.30 ? v/c reference to 25c, i d = 1.0ma voltage r ds(on) static drain-to-source on-state ? ? 0.41 ? v gs = 12v, i d = 6.0a resistance v gs(th) gate threshold voltage 2.5 ? 4.5 v v ds = v gs , i d = 1.0ma g fs forward transconductance 4.0 ? ? s v ds > =15v, i ds = 6.0a i dss zero gate voltage drain current ? ? 10 v ds = 200v ,v gs =0v ??25 v ds = 200v, v gs = 0v, t j = 125c i gss gate-to-source leakage forward ? ? 100 v gs = 20v i gss gate-to-source leakage reverse ? ? -100 v gs = -20v q g total gate charge ? ? 32 v gs =12v, i d = 9.6a q gs gate-to-source charge ? ? 11 nc v ds = 125v q gd gate-to-drain (?miller?) charge ? ? 16 t d (on) turn-on delay time ? ? 25 v dd = 125v, i d = 9.6a, t r rise time ? ? 100 v gs =12v, r g = 7.5 ? t d (off) turn-off delay time ? ? 35 t f fall time ? ? 30 l s + l d total inductance ? 6.8 ? c iss input capacitance ? 1016 ? v gs = 0v, v ds = 25v c oss output capacitance ? 157 ? p f f = 1.0mhz c rss reverse transfer capacitance ? 9.0 ? na nh ns a thermal resistance parameter min typ max units t est conditions r thjc junction-to-case ? ? 1.67 r thja junction-to-ambient ? ? 80 c/w source-drain diode ratings and characteristics parameter min typ max units t est conditions i s continuous source current (body diode) ? ? 9.6 i sm pulse source current (body diode) ? ? 38.4 v sd diode forward voltage ? ? 1.2 v t j = 25c, i s = 9.6a, v gs = 0v t rr reverse recovery time ? ? 300 ns t j = 25c, i f = 9.6a, di/dt 100a/ s q rr reverse recovery charge ? ? 3.1 cv dd 25v t on forward turn-on time intrinsic turn-on time is negligible. turn-on speed is substantially controlled by l s + l d . a note: corresponding spice and saber models are available on international rectifier web site. measured from drain lead (6mm 0.25in. from package) to source lead (6mm/0.25in. from package) www.irf.com 3 irhy57234cmse table 1. electrical characteristics @ tj = 25c, post total dose irradiation international rectifier radiation hardened mosfets are tested to verify their radiation hardness capability. the hardness assurance program at international rectifier is comprised of two radiation environments. every manufacturing lot is tested for total ionizing dose (per notes 5 and 6) using the to-3 package. both pre- and post-irradiation performance are tested and specified using the same drive circuitry and test conditions in order to provide a direct comparison. radiation characteristics fig a. single event effect, safe operating area international rectifier radiation hardened mosfets have been characterized in heavy ion environment for single event effects (see). single event effects characterization is illustrated in fig. a and table 2. parameter 100k rads (si) units test conditions min max bv dss drain-to-source breakdown voltage 250 ? v v gs = 0v, i d = 1.0ma v gs(th) gate threshold voltage 2.0 4.5 v gs = v ds , i d = 1.0ma i gss gate-to-source leakage forward ? 100 na v gs = 20v i gss gate-to-source leakage reverse ? -100 v gs = -20v i dss zero gate voltage drain current ? 10 a v ds = 200v, v gs = 0v r ds(on) static drain-to-source on-state resistance (to-3) ? 0.414 ? v gs = 12v, i d = 6.0a r ds(on) static drain-to-source v sd diode forward voltage ? 1.2 v v gs = 0v, i d = 9.6a on-state resistance (t0-257aa) ? 0.41 ? v gs = 12v, i d = 6.0a 0 50 100 150 200 250 300 -20 -15 -10 -5 0 bias vgs (v) bias vds (v) let=38 5% let=61 5% let=84 5% table 2. typical single event effect safe operating area let energy range vds (v) (mev/(mg/cm 2 )) (mev) (m) @vgs = @vgs = @vgs = @vgs = @vgs = 0v -5v -10v -15v -20v 38 5% 300 7.5% 38 7.5% 250 250 250 250 250 61 5% 330 7.5% 31 10% 250 250 250 250 240 84 5% 350 10% 28 7.5% 250 250 225 175 50 irhy57234cmse pre-irradiation 4 www.irf.com 15 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 150 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain-to-source current (a) ds d 5.0v 0.1 1 10 100 5 6 7 8 9 10 11 v = 50v 20s pulse width ds v , gate-to-source voltage (v) i , drain-to-source current (a) gs d t = 25 c j t = 150 c j -60 -40 -20 0 20 40 60 80 100 120 140 160 0.0 0.5 1.0 1.5 2.0 2.5 t , junction temperature ( c) r , drain-to-source on resistance (normalized) j ds(on) v = i = gs d 12v 10a 0 .001 0.01 0.1 1 10 100 0.1 1 10 100 20s pulse width t = 25 c j top bottom vgs 15v 12v 10v 9.0v 8.0v 7.0v 6.0v 5.0v v , drain-to-source voltage (v) i , drain to source current (a) ds d 5.0v 0.01 0.001 i d ? drain-to-source current (a) 9.6a www.irf.com 5 irhy57234cmse ! ! " " " #$ pre-irradiation 1 10 100 0 400 800 1200 1600 2000 v , drain-to-source voltage (v) c, capacitance (pf) ds v c c c = = = = 0v, c c c f = 1mhz + c + c c shorted gs iss gs gd , ds rss gd oss ds gd c rss c oss c iss 0 10 20 30 40 0 5 10 15 20 q , total gate charge (nc) v , gate-to-source voltage (v) g gs for test circuit see figure i = d 13 10a v = 50v ds v = 125v ds v = 200v ds 0.1 1 10 100 0.4 0.6 0.8 1.0 1.2 v ,source-to-drain voltage (v) i , reverse drain current (a) sd sd v = 0 v gs t = 25 c j t = 150 c j 9.6a 1 10 100 1000 v ds , drain-to-source voltage (v) 0.01 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1ms 10ms operation in this area limited by r ds (on) 100 s dc irhy57234cmse pre-irradiation 6 www.irf.com $ v ds 90% 10% v gs t d(on) t r t d(off) t f $ %& 1 0.1 % ! + - ' & ( )* " 0.01 0.1 1 10 0.00001 0.0001 0.001 0.01 0.1 1 notes: 1. duty factor d = t / t 2. peak t = p x z + t 1 2 j dm thjc c p t t dm 1 2 t , rectangular pulse duration (sec) thermal response (z ) 1 thjc 0.01 0.02 0.05 0.10 0.20 d = 0.50 single pulse (thermal response) v gs 25 50 75 100 125 150 0.0 2.0 4.0 6.0 8.0 10.0 t , case temperature ( c) i , drain current (a) c d www.irf.com 7 irhy57234cmse q g q gs q gd v g charge d.u.t. v ds i d i g 3ma v gs .3 f 50k ? .2 f 12v current regulator same type as d.u.t. current sampling resistors + - +, ! -! %& & ' " . ( & %& . ( & t p v (br)dss i as pre-irradiation r g i as 0.01 ? t p d.u.t l v ds + - v dd driver a 15v 20v v gs 25 50 75 100 125 150 0 20 40 60 80 100 starting t , junction temperature ( c) e , single pulse avalanche energy (mj) j as i d top bottom 4.3a 6.1a 9.6a irhy57234cmse pre-irradiation 8 www.irf.com pulse width 300 s; duty cycle 2% total dose irradiation with v gs bias. 12 volt v gs applied and v ds = 0 during irradiation per mil-std-750, method 1019, condition a. total dose irradiation with v ds bias. 200 volt v ds applied and v gs = 0 during irradiation per mll-std-750, method 1019, condition a. repetitive rating; pulse width limited by maximum junction temperature. v dd = 50v, starting t j = 25c, l= 1.3mh peak i l = 9.6a, v gs = 12v i sd 9.6a, di/dt 394a/ s, v dd 250v, t j 150c footnotes: ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 ir leominster : 205 crawford st., leominster, massachusetts 01453, usa tel: (978) 534-5776 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . data and specifications subject to change without notice. 03/2012 3.05 [.120] 0.13 [.005] 0.71 [.028] max. b 5.08 [.200] 4.83 [.190] 10.92 [.430] 10.42 [.410] 1.14 [.045] 0.89 [.035] 16.89 [.665] 16.39 [.645] 3 2 1 15.88 [.625] 12.70 [.500] 0.88 [.035] 0.64 [.025] ? 0.50 [.020] c a b 2x 3x ? 2.54 [.100] c 10.66 [.420] 10.42 [.410] a 13.63 [.537] 13.39 [.527] 3x ? 3.81 [.150] 3.56 [.140] case outline and dimensions ? to-257aa 2 = source 1 = drain not es : 1. dimens ioning & t olerancing per ans i y14.5m-1994. 2. cont roll ing dimens ion: inch. 3. dimens ions are s hown in mill imet ers [inches ]. 4. outline conforms to jedec outline to-257aa. legend 3 = gate |
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